Improved high-temperature performance of 1.3-1.5-μm InNAsP-InGaAsP quantum-well microdisk lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 8, 1997, Pages 1072-1074

  Bi, W G ^b   Ma, Y ^c   Zhang, J P ^c   Wang, L W ^c   Ho, S T ^a,c   Tu, C W ^a,b  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Northwestern University   (United States)

Author keywords

Carrier leakage; Characteristics temperature; InNAsP InGaAsP quantum well; Microdisk lasers; Optical fiber windows

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; HIGH TEMPERATURE PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

CARRIER LEAKAGE; MICRODISK LASERS;

QUANTUM WELL LASERS;

EID: 0031208569     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.605503     Document Type: Article

References (12)

1. Y. Horikoshi, GaInAsP Alloy Semiconductors, T. P. Pearsall, Ed. New York: Wiley, 1982, ch. 13.
2. 1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications," IEEE J. Quantum Electron., vol. 30, pp. 511-522, 1994.
3. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, "Progress in long-wavelength strained-layer InGaAs(P) quanlum-well semiconductor lasers and amplifiers," IEEE J. Quantum Electron., vol. 30, pp. 477-498, 1994.
4. G. P. Agrawal and N. K. Dutta, Long Wavelength Semiconductor Lasers. New York: Van Nostrand Reinhold, 1986.
5. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki and Y. Yazawa, "A novel material of GaInNA's for long-wavelength-range laser diodes with excellent high-temperature performance," 1995 Solid State Devices and Materials, Osaka, Japan, 1996, pp. 1016-1018.
6. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 1273-1275, 1996.
7. S. Sakai, Y. Ueta, and Y. Teauchi, "Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron," Jpn. J. Appl. Phys., vol. 32, pp. 4413-4417, 1993.
8. 1-x," J. Appl. Phys., vol. 80, pp. 1934-1936, 1996.
9. M. Yamamoto, N. Yamamoto, and J. Nakano, "MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers," IEEE J. Quantum Electron., vol. 30, pp. 554-561, 1994.
10. S. T. Ho, S. L. McCall, and R. E. Slusher, "Spontaneous emission from excitons in thin dielectric layers," Opt. Lett., vol. 18, pp. 909-911, 1993.
11. J. P. Zhang, D. Y. Chu, S. L. Wu, S. T. Ho, W. G. Bi, C. W. Tu, and R. C. Tiberio, "Directional light output from Photonic-wire microcavity semiconductor lasers," Phys. Rev. Lett., vol. 75, pp. 2678-2681, 1995.
12. D. Y. Chu, M. K. Chin, N. J. Sauer, Z. Xu, T. Y. Chang, and S. T. Ho, "1.5-μm InGaAs/InAlGaAs quantum-well microdisk lasers," IEEE Photon. Technol. Lett., vol. 5. pp. 1353-1355, 1993.