Ferroelectric nonvolatile memory technology

IEICE Transactions on Electronics

Volumn E79-C, Issue 6, 1996, Pages 812-818

  Sumi, Tatsumi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Architecture; Cell; Ferroelectric; Material; Memory; Nonvolatile; Y1.256 kbit feram

Indexed keywords

FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; LOGIC GATES; PEROVSKITE; RANDOM ACCESS STORAGE; ROM; STRONTIUM COMPOUNDS;

CELL CONFIGURATION; FERROELECTRIC NONVOLATILE MEMORY; HIGH DENSITY MEMORY; VOLTAGE GENERATOR;

NONVOLATILE STORAGE;

EID: 0030164490     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. T. Sumi, N. Moriwaki, G. Nakane, T. Nakakuma, Y. Judai, Y. Uemoto, Y. Nagano, S. Hayashi, M. Azuma, E. Fujii, S. Katsu, T. Otsuki, L. McMillan, C. A. P. de Araujo, and G. Kano, "A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns," ISSCC Dig. of Tech. Papers, pp. 268-269, Feb. 1994.
2. R. Moazzami, C. Hu, and W. H. Shepherd, "A ferroelectric DRAM cell for high density NVRAMs," Symposium on VLSI Technology Dig. of Tech. Papers, pp. 15 -16, Jun. 1990.
3. 2 bottom electrodes," Proc. the Sixth International Symposium on Integrated Ferroelectrics, vol.8, pp. 151-163, March 1994.
4. 2 electrodes," JJAP, vol. 33, no. 9b, pp. 5207-5210, Sept. 1994.
5. 2 thin film electrodes for ferroelectric thin films," JJAP, vol. 33, no. 9b, pp. 5223-5226, Sept. 1994.
6. K. Nishikawa, Y. Kusumi, T. Oomori, M. Hanazaki, and K. Namba, "Platinum etching and plasma characteristics in RF magnetron and electron cyclotron resonance plasmas," JJAP, vol.32, no. 12b, pp. 6102-6108, Dec. 1993.
7. S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, S. Ohnishi, J. Kudo, and K. Sakiyama, "High temperature etch-ing of PZT/Pt/TiN structure by high density ECR plasma," Extended Abstracts of the 1994 Inter National Conference on SSDM, pp. 721-723, 1994.
8. K. Arita, E. Fujii, Y. Shimada, Y. Uemoto, T. Nasu, A. Inoue, A. Matsuda, T. Otsuki, and N. Suzuoka, "Si LSI process technology for integrating ferroelectric capacitors," JJAP, vol. 33, no. 9b, pp. 5397-5399, Sept. 1994.
9. S. Hayashi, M. Huffman, M. Azuma, Y. Shimada, T. Otsuki, G. Kano, L. D. McMillan, and C. A. Araujo, "Gigabit-scale DRAM capacitor technology with high dielectric constant thin films by a novel conformai deposition technique," Symposium on VLSI Technology Dig. of Tech. Papers, pp. 154-155, 1994.
10. T. Kawahara, M. Yamamuka, A. Yuuki, and K. Ono, "Surface morphologies and electrical properties of (Ba, Sr)TiO3 films prepared by two-step deposition of liquid source chemical vapor deposition," JJAP, vol. 34, no. 9b, pp. 5077-5082, Sept. 1995.
11. J. T. Evans and R. Womack, "An experimental 512-bit nonvalatile memory with ferroelectric storage cell," IEEE J. Solid State Circuits, vol.23, no. 5, pp. 1171-1175, Oct. 1988.
12. R. Womach and D. Toisch, "A 16kb ferroelectric nonvolatile memory with a bit parallel architecture," ISSCC Dig. of Tech. Papers, pp. 242-243, Feb. 1989. .
13. S. S. Eaton, D. B. Butler, M. Parris, D. Willson, and H. McNeillie, "A ferroelectric nonvolatile memory," ISSCC Dig. of Tech. Papers, pp. 130-131, Feb. 1988.
14. T. Sumi, M. Azuma, T. Otsuki, J. Gregory, and C. A. P. de Araujo, "A 0.9 V embedded ferroelectric memory for microcontrollers," ISSCC Dig. of Tech. Papers, pp. 70-71, Feb. 1995.
15. T. Sumi, "Ferroelectric nonvolatile memory technology and its applications," Extended Abstract, of the 1995 Inter National Conference on SSDM, pp. 518-520, 1995.
16. C. A. Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, "Fatigue-free ferroelectric capacitors with platinum electrodes," NATURE, vol. 374, no. 13, pp. 627-629, 1995.