Characteristics of bismuth layered srbi2ta2O9thin-film capacitors and comparison with pb(zr, ti)O3

Japanese Journal of Applied Physics

Volumn 34, Issue 9, 1995, Pages 5233-5239

  Mihara, Takashi ^a   Yoshimori, Hiroyuki ^a   Araujo, Carlos A Paz De ^b  

^a OLYMPUS CORPORATION   (Japan)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

BLSF; Fatigue; Ferroelectrics; Hysteresis Loop; Leakage Current; PZT; Retention; Signal Noise Ratio; Space Charge; SrBi2Ta2O9; Thin Film

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; COATING TECHNIQUES; ELECTRIC SPACE CHARGE; FATIGUE OF MATERIALS; LEAD COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; SIGNAL TO NOISE RATIO; SOLID SOLUTIONS; THIN FILMS; TITANIUM OXIDES;

COERCIVE FIELD; DOMAIN MOTION; HYSTERESIS LOOP; LEAD ZIRCONATE TITANATE; METALLORGANIC DECOMPOSITION SPIN ON COATING TECHNIQUE; PLATINUM ELECTRODE; REMANENT POLARIZATION; STRONTIUM BISMUTH NIOBATE THIN FILMS; STRONTIUM BISMUTH TANTALUM OXIDE THIN FILMS; STRONTIUM BISMUTH TITANIUM OXIDE THIN FILMS;

FERROELECTRIC MATERIALS;

EID: 0029370053     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.5233     Document Type: Article

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