Crystalline-buffer-layer-aided (CBL) sputtering technique for mega-bit ferroelectric memory devices with SrBi2Ta2O9 capacitors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 691-694

  Matsuki, Takeo ^a   Hayashi, Yoshihiro ^a   Kunio, Takemitsu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CAPACITORS; CRYSTAL STRUCTURE; ELECTRODES; INTERFACES (MATERIALS); PLATINUM; POLARIZATION; RANDOM ACCESS STORAGE; SECONDARY ION MASS SPECTROMETRY; STRONTIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINE BUFFER LAYER AIDED SPUTTERING; FERROELECTRIC MEMORY DEVICES; STRONTIUM BISMUTH TANTALATE;

SPUTTERING;

EID: 0030415653     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)