Preparation of ferroelectric thin films of bismuth layer structured compounds

Japanese Journal of Applied Physics

Volumn 34, Issue 9, 1995, Pages 5240-5244

  Watanabe, Hitoshi ^a   Mihara, Takashi ^a   Yoshimori, Hiroyuki ^a   Araujo, Carlos A Paz De ^b  

^a OLYMPUS CORPORATION   (Japan)

^b Symetrix Corporation   (United States)

Author keywords

Fatigue; Ferroelectrics; Hysteresis Curves; Microstructures; SrBi2Nb2O9; SrBi2Ta2O9; SrBi4Ti4O15; Thin Film; X ray Diffraction

Indexed keywords

BISMUTH COMPOUNDS; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; FATIGUE OF MATERIALS; LATTICE CONSTANTS; PLATINUM; SILICON; SOLID SOLUTIONS; STOICHIOMETRY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HYSTERESIS CURVES; METALLORGANIC DECOMPOSITION (MOD) METHOD; REMANENT POLARIZATION; SPIN ON TECHNIQUE; STRONTIUM BISMUTH NIOBATE THIN FILMS; STRONTIUM BISMUTH TANTALUM OXIDE THIN FILMS; STRONTIUM BISMUTH TITANIUM OXIDE THIN FILMS;

FERROELECTRIC MATERIALS;

EID: 0029371640     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.5240     Document Type: Article

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