Preparation of bi-based ferroelectric thin films by sol-gel method

Japanese Journal of Applied Physics

Volumn 34, Issue 9, 1995, Pages 5096-5099

  Atsuki, Tsutomu ^a   Soyama, Nobuyuki ^a   Yonezawa, Tadashi ^a   Ogi, Katsumi ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

Electrical property; Ferroelectric thinfilm; Hysteresis loop; Lifetime; Sol gel; SrBi2O9

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CAPACITORS; COMPOSITION EFFECTS; CRYSTAL GROWTH; FILM GROWTH; FILM PREPARATION; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SOL-GELS; SUBSTRATES; THIN FILMS;

ELECTRON PROBE MICROANALYZER; HYSTERESIS LOOP; REMANENT POLARIZATION; SPIN ON COATING; STRONTIUM BISMUTH TANTALUM OXIDE THIN FILM CAPACITORS;

FERROELECTRIC MATERIALS;

EID: 0029370052     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.5096     Document Type: Article

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