Preparation of C-axis-oriented bi4Ti3o12 thin films by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 32, Issue 9, 1993, Pages 4086-4088

  Nakamura, Takashi ^a   Muhammet, Rusul ^b   Shimizu, Masaru ^b   Shiosaki, Tadashi ^b  

^a ROHM CO LTD   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Bi(C6H5)3; Bismuth titanate; Buffer layer; D E hysteresis; Ferroelectric thin films; MOCVD

Indexed keywords

BISMUTH COMPOUNDS; CHEMICAL VAPOR DEPOSITION; COERCIVE FORCE; CRYSTAL ORIENTATION; FERROELECTRIC MATERIALS; FILM GROWTH; HYSTERESIS; MORPHOLOGY; POLARIZATION; SUBSTRATES; SURFACE PROPERTIES; THIN FILMS;

BUFFER LAYERS; C AXIS ORIENTATION; METALORGANIC CHEMICAL VAPOR DEPOSITION; THIN BISMUTH TITANATE FILMS;

FILM PREPARATION;

EID: 0027660188     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.4086     Document Type: Article

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