Effects of oxygen concentration on growth of Bi4Ti3O12 thin films by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 33, Issue 9 S, 1994, Pages 5215-5218

  Muhammet, Rusul ^a   Nakamura, Takashi ^b   Shimizu, Masaru ^c   Shiosaki, Tadashi ^c  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b ROHM CO LTD   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

AFM image; Bi4Ti3O12; Ferroelectric; MFS FET; MOCVD; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CRYSTAL ORIENTATION; CURRENT DENSITY; FILM GROWTH; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; POLARIZATION; SILICON; SUBSTRATES; THIN FILMS;

METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFS-FET); OXYGEN GAS FLOW RATE; REMANENT POLARIZATION;

FERROELECTRIC MATERIALS;

EID: 0028509813     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.5215     Document Type: Article

References (9)

1. M. Toyoda, Y. Hamaji, K. Tomono and D.A. Payne: Jpn. J. Appl. Phys. 32 (1993) 4158.
2. K. Sugibuchi, Y. Kurogi and N. Endo: J. Appl. Phys. 46 (1975) 2877.
3. Y. Masuda, A. Baba, H. Masumoto, T. Goto, M. Minakata and T. Hirai: Jpn. J. Appl. Phys. 30 (1991) 2212.
4. W. Jo, H. J. Cho, T. W. Noh, B. I. Kim, D. Y. Kim, Z. G. Khim and S. I. Kwun: Appl. Phys. Lett. 63 (1993) 2198.
5. M. Miyajima, R. Muhammet and M. Okada: Nippon Kagaku Kaishi (1991) 1373 [in Japanese].
6. T. Nakamura, R. Muhammet, M. Shimizu and T. Shiosaki: Jpn. J. Appl. Phys. 32 (1993) 4086.
7. K. Sugibuchi: Oyo Buturi 44 (1975) 812 [in Japanese].
8. S. Y. Wu: Ferroelectrics 11 (1976)379.
9. Y. Matsui, M. Okuyama, M. Noda and Y. Hamakawa: Appl. Phys. A 28 (1982) 161.