High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy

IEEE Photonics Technology Letters

Volumn 8, Issue 8, 1996, Pages 986-988

  Savolainen, Pekka ^b   Toivonen, Mika ^b   Asonen, Harry ^a,c   Pessa, Markus ^b   Murison, Richard ^d  

^a IEEE

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c Tutcore Ltd   (Finland)

^d EG and G Optoelectronics   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EPOXY RESINS; FIBER LASERS; FLUXES; HEAT SINKS; HETEROJUNCTIONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PUMPING (LASER); RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM FREE PUMP LASERS; BEAM FLUXES; ERBIUM DOPED FIBER AMPLIFIERS; LASER CHIPS; LIGHT CURRENT CHARACTERISTICS; RIDGE WAVEGUIDE LASERS; SEPARATE CONFINEMENT HETEROSTRUCTURE; SOLID SOURCE MOLECULAR BEAM EPITAXY; VALVED CRACKER CELLS;

QUANTUM WELL LASERS;

EID: 0030214353     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.508712     Document Type: Article

References (11)

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