메뉴 건너뛰기




Volumn 33, Issue 9, 1997, Pages 778-779

Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020 nm) laser diodes

Author keywords

Reliability; Semiconductor junction lasers

Indexed keywords

RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; WAVEGUIDES;

EID: 0031117956     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970502     Document Type: Article
Times cited : (5)

References (6)
  • 3
    • 0030214353 scopus 로고    scopus 로고
    • High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy
    • SAVOLAINEN, P., TOIVONEN, M., ASONEN, H., PESSA, M., and MURISON, R.: 'High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy', IEEE Photonics Technol. Lett., 1996, 8, (8), pp. 986-988
    • (1996) IEEE Photonics Technol. Lett. , vol.8 , Issue.8 , pp. 986-988
    • Savolainen, P.1    Toivonen, M.2    Asonen, H.3    Pessa, M.4    Murison, R.5
  • 5
    • 0030736892 scopus 로고    scopus 로고
    • Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-mm GaInAs-GaInP strained quantum-well laser
    • HASHIMOTO, J.-I., YOSHIDA, I., MURATA, M., and KATSUYAMA, T.: 'Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-mm GaInAs-GaInP strained quantum-well laser', IEEE J. Quantum Electron., 1997, 33, (1), pp. 66-70
    • (1997) IEEE J. Quantum Electron. , vol.33 , Issue.1 , pp. 66-70
    • Hashimoto, J.-I.1    Yoshida, I.2    Murata, M.3    Katsuyama, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.