Etching and surface modification of GaAs by hydrogen radicals generated by hydrogen microwave afterglow method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 A, 1996, Pages

  Nagayoshi, H ^a   Yamamoto, Y ^a   Kamisako, K ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FREE RADICALS; MICROWAVES; SURFACE TREATMENT;

AFTERGLOW PLASMA; HYDROGEN RADICALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030121642     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l451     Document Type: Article

References (6)