Surface decontamination of patterned GaAs substrates for molecular beam epitaxy regrowth using a hydrogen radical source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 2, 1997, Pages 325-328

  Burke, T M ^a   Quierin, M A ^a   Grimshaw, M P ^a   Ritchie, D A ^a   Pepper, M ^a,b   Burroughes, J H ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042583176     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589315     Document Type: Article

References (11)

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