Dispersion forces and hamaker constants for intergranular films in silicon nitride from spatially resolved-valence electron energy loss spectrum imaging

Acta Materialia

Volumn 46, Issue 7, 1998, Pages 2271-2287

  French, R H ^a   Mullejans H ^b,d   Jones, D J ^a   Duscher, G ^b   Cannon, R M ^c   Ruhle M ^b  

^a DUPONT COMPANY   (United States)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d JOINT RESEARCH CENTRE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHEMICAL BONDS; CRYSTAL MICROSTRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; FILMS; GRAIN BOUNDARIES; GRANULAR MATERIALS; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES;

DISPERSION FORCES; HAMAKER CONSTANTS; INTERGRANULAR FILMS; LIFSHITZ THEORY; VALENCE ELECTRON ENERGY LOSS SPECTROSCOPY;

SILICON NITRIDE;

EID: 0032036111     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6454(98)80008-6     Document Type: Article

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