Grain-boundary microstructure and chemistry of a hot isostatically pressed high-purity silicon nitride

Journal of the American Ceramic Society

Volumn 79, Issue 9, 1996, Pages 2313-2320

  Pan, Xiaoqing ^a,d   Gu, Hui ^a,d   Van Weeren, Remco ^b,d   Danforth, Stephen C ^b,d   Cannon, Rowland M ^c,d   Rühle, Manfred ^a,d  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b RUTGERS UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISTRY; COMPOSITION; CRYSTAL MICROSTRUCTURE; DISSOLUTION; ELECTRON ENERGY LOSS SPECTROSCOPY; FILMS; GRAIN BOUNDARIES; HOT ISOSTATIC PRESSING; OXYGEN; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS LASER DERIVED SILICON NITRIDE POWDER; CALCIUM CONCENTRATION; GRAIN BOUNDARY MICROSTRUCTURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PARTIAL DISSOLUTION; SILICON OXYNITRIDE; THREE GRAIN JUNCTIONS; TWO GAIN JUNCTIONS;

SILICON NITRIDE;

EID: 0030242032     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1996.tb08978.x     Document Type: Article

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