SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 400, Issue 1-3, 1998, Pages 109-115

Nucleation behaviour during silicon UHV-CVD on Si(111)7 × 7

(4) Albertini, D a Thibaudau, F a Masson, L a Salvan, F a

a AIX MARSEILLE UNIVERSITY (France)

Author keywords

Chemical vapor deposition; Energy dissipation; Growth; Nucleation; Scanning tunneling microscopy; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY DISSIPATION; HYDROGEN; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILANES; THERMAL EFFECTS; VACUUM APPLICATIONS;

ULTRAHIGH VACUUM;

SILICON;

EID: 0032028514 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00847-9 Document Type: Article

Times cited : (7)

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