A comparison of the performance and reliability of wet-etched and dry-etched a-Si:H TFT's

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 560-563

  Gadelrab, Serag M ^a   Miri, Amir M ^a   Chamberlain, Savvas G ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous silicon; Etching methods; Tft's

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; GATES (TRANSISTOR); PLASMAS;

PLASMA INDUCED DAMAGE; WET ETCHING;

THIN FILM TRANSISTORS;

EID: 0032002194     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658694     Document Type: Article

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