Thin Film Transistors with Graded SiNx Gate Dielectrics

Journal of the Electrochemical Society

Volumn 141, Issue 4, 1994, Pages 1061-1065

  Kuo, Yue ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

carrier mobility; dielectric thin films; electric properties; high field effects; interface states; plasma CVD; thin film transistors

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; FILM PREPARATION; INTERFACES (MATERIALS); PERFORMANCE; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS;

DENSITY OF STATES; GATE DIELECTRICS; MOBILITY; ON/OFF CURRENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBTHRESHOLD SLOPE; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

GATES (TRANSISTOR);

EID: 0028419911     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2054841     Document Type: Article

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