Simultaneous relaxation of network and defects in silicon-implanted a-Si:H

Materials Research Society Symposium - Proceedings

Volumn 377, Issue , 1995, Pages 173-178

  Nakata, J ^a   Sherman, S ^a   Wagner, S ^a   Stolk, P A ^a   Poate, J M ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; DENSITY (OPTICAL); HYDROGEN; RELAXATION PROCESSES; SEMICONDUCTING SILICON;

ANNEALING TEMPERATURE; DARK CONDUCTIVITY; DEFECT DENSITY; ELECTRONIC TRANSPORT DATA; EQUILIBRIUM ENERGY; HOPPING CONDUCTION; OPTICAL TRANSPORT DATA; URBACH ENERGY;

AMORPHOUS SILICON;

EID: 0029514026     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-377-173     Document Type: Conference Paper

References (11)