Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1990, Pages 69-70

  Hori, Takashi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS DOPING; DEVICE PERFORMANCE; DRAIN STRUCTURE; GATE-INDUCED DRAIN LEAKAGE; HOT CARRIER RELIABILITY; SPACER LENGTHS; TUNNELING LEAKAGE;

DEFECTS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; TRANSISTORS, FIELD EFFECT--ION IMPLANTATION;

STRUCTURAL DESIGN; SEMICONDUCTOR DEVICES, MOSFET;

DIGEST OF PAPER; HOT CARRIERS; IMPLANTED-DRAIN DEVICES;

EID: 0025659257     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1990.111012     Document Type: Conference Paper

References (5)

1. T. Chen et al, IEDM 1987, p. 718.
2. C. Chang et al, IEDM 1987, p. 714.
3. R. Shirota et al, IEDM 1988, p. 26.
4. T. Hori et al, VLSI Symp. 1988, p.15.
5. T. Hori, IEDM 1989, talk 32.4.