Gate-induced band-to-band tunneling leakage current in LDD MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 147-150

  Wann, Hsing Jen ^a   Ko, P K ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT;

BAND TO BAND TUNNELING; BAND-TO-BAND TUNNELING LEAKAGE; CURRENT MAGNITUDES; GATE INDUCED DRAIN LEAKAGE CURRENTS; LEAKAGE COMPONENTS; OFF-STATE LEAKAGE; OXIDE SCALING; TUNNELING LEAKAGE CURRENT;

MOSFET DEVICES;

EID: 33747400361     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307329     Document Type: Conference Paper

References (7)

1. J. Chen. T. Y. Chan. I. e. Chen. P. K. Ko. and C. Hu. "Subbreakdown drain leakage current in MOSFET. " IEEE ELECTRON DEVICE LETTERS. Vol. EDL-8. NO. 11. NOV. 1987. pp. 515.
2. T. Y. Chan. J. Chen, P. K. Ko. and C. Hu. The impact of gated-induced drain leakage current on MOSFET scaling. '1 IEDM Tech. Dig. 1987, pp. 718.
3. S. A. Parke. J. E. Moon. H. J. Wann. P. K. Ko. and C. Hu. "Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model. '' IEEE TRANS. Electron Devices. Vol. 39. NO. 7. July 1992.
4. E. O. Kane. Theory of tunneling. " Journal of Appl. Phys. 32, 83. 1961.
5. J. J. Sakurai. Modern Quantum Mechanics. The Benjamin/Cummings Publishing Company, pp. 48.
6. L. V. Keldysh. "Influence of the lattice vibrations of a crystal on the production of electron-hole pairs in a strong electrical field. " Soviet Physics JETP, Vol. 34(7). NO. 4. Oct. 1958. pp. 665.
7. S. Wang. Fundamentals of Semiconductor Theory and Device Physces. Prentice-Hall. 1989. pp. 484 and pp. 491.