Optical effect in InAlAs/InGaAs/InP MODFET

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 68-77

  Mitra, H ^a   Pal, B B ^a   Singh, S ^a   Khan, R U ^a  

^a D L W   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

MODULATION FIELD EFFECT TRANSISTORS (MODFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031701566     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658813     Document Type: Article

References (12)

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