Numerical Analysis of the Photoeffects in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 39, Issue 7, 1992, Pages 1564-1570

  Lo, Shih Hsien ^a   Lee, Chien Ping ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--NUMERICAL METHODS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

I-V CHARACTERISTICS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026896420     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.141220     Document Type: Article

References (22)

1. C. Baack, G. Elze, and G. Waif, “GaAs M.E.S.F.E.T.: A high-speed optical detector,” Electron. Lett., vol. 13, no. 7, 193, 1977.
2. J. Pan, “GaAs MESFET for high speed optical detection,” in SPIE Int. Tech. Symp. (San Diego, CA), 1978.
3. J. M. Osterwalder and B. J. Rickett, “GaAs MESFET demodulates gigabit signal rates from GaAlAs injection laser,” Proc. IEEE, vol. 67, no. 6, pp. 966–968, June 1979.
4. T. Sugeta and Y. Mizushima, “High speed photoresponse mechanism of a GaAs-MESFET,” Japan. J. Appl. Phys., vol. 19, no. pp. L27-29, Jan. 1980.
5. H. J. Sun, R. J. Gutmann, and J. M. Borrego, “Photoeffects in common-source and common-drain microwave GaAs MESFET oscillators,” Solid-State Electron., vol. 24, no. 10, pp. 935–940, 1981.
6. H. Mizuno, “Microwave characteristics of an optically controlled GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, no. 7, pp. 596–600, July 1983.
7. A. A. Salles, “Optical control of GaAs MESFET’s,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, no. 10, pp. 812–820, Oct. 1983.
8. R. N. Simons, “Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, no. 12, pp. 1444–1455, Dec. 1987.
9. A. J. Seeds and A. A. Salles, “Optical control of microwave semiconductor devices,” IEEE Trans. Microwave Theory Tech., vol. 38, no. 5, pp. 577–585, May 1990.
10. J. Graffeuil, P. Rossel, and H. Martinot, “Light-induced effects in GaAs F.E.T.s,” Electron. Lett., vol. 15, no. 14, pp. 439–441, July 1979.
11. W. D. Edwards, “Two and three terminal gallium arsenide FET optical detectors,” IEEE Electron Device Lett., vol. EDL-1, no. 8, pp. 149–150, Aug. 1980.
12. R. N. Simons and K. B. Bhasin, “Analysis of optically controlled microwave/millimeter-wave device structures,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, no. 12, pp. 1349–1355, Dec. 1986.
13. J. L. Gautier, D. Pasquet, and P. Pouvil, “Optical effects on the static and dynamic characteristics of a GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 9, pp. 819–822, 1985.
14. S. Mishra, V. K. Singh, and B. B. Pal, “Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 2–10, Jan. 1990.
15. S. N. Mohammad, M. S. Unlu, and H. Morkoc, “Optically controlled current-voltage characteristics of ion-implanted MESFETs,” Solid-State Electron., vol. 33, no. 12, pp. 1499–1509, 1990.
16. C. Kocot and C. A. Stolte, “Backgating in GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-29, no. 7, pp. 1059–1064, July 1982.
17. H. C. Casey Jr., D. D. Sell, and K. W. Wecht, “Concentration dependence of the absorption coefficient for n-type and p-type GaAs between 1.3 and 1.6 eV,” J. Appl. Phys., vol. 46, no. 1, pp. 250–257, Jan. 1975.
18. G. Baccarani, M. Rudan, R. Guerrieri, and P. Ciampolini, “Physical models for numerical device simulations,” in Process and Device Modeling, W. L. Eng, Ed. Amsterdam, The Netherlands: North-Holland, 1986, pp. 107–158.
19. H. C. Casey Jr., B. I. Miller, and E. Pinkas, “Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers,” J. Appl. Phys., vol. 44, pp. 1281–1287, Mar. 1973.
20. G. M. Martin, “Key electrical parameters in semi-insulating materials: The methods to determine them in GaAs,” Inst. Phys. Conf. Ser., pp. 13–28, 1980.
21. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
22. H. K. Gummel, “A self-consistent iterative scheme for one-dimensional steady state transistor calculations,” IEEE Trans. Electron Devices, vol. ED-11, pp. 455–465, 1964.