Optically controlled characteristics in an ion-implanted silicon MESFET

Solid State Electronics

Volumn 29, Issue 7, 1986, Pages 707-711

  Singh, V K ^a   Chattopadhyay, S N ^a   Pal, B B ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 46149132466     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90156-5     Document Type: Article

References (7)

1. GaAs m.e.s.f.e.t.: a high-speed optical detector
2. A device model for an ion-implanted MESFET
3. Measurement and simulation of GaAs FET's under electron-beam irradiation
4. Short-channel MOST threshold voltage model