An Analytic Model for MODFET Capacitance-Voltage Characteristics

IEEE Transactions on Electron Devices

Volumn 37, Issue 5, 1990, Pages 1193-1198

  George, G ^a   Hauser, John R ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR MATERIALS--ELECTRIC PROPERTIES;

FREE ELECTRONS; GATE CAPACITANCE; MODFET; MODULATION DOPED FET;

TRANSISTORS, FIELD EFFECT;

EID: 0025429857     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.108179     Document Type: Article

References (11)

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