Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET

IEEE Transactions on Microwave Theory and Techniques

Volumn 35, Issue 12, 1987, Pages 1444-1455

  Simons, Rainee N ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84993728864     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1987.1133873     Document Type: Article

References (23)

1. R. G. Hunsperger, “Optical control of microwave devices,” in Integrated Optical Circuit Engineering II, SPIE vol. 578, S. Sriram, Ed. Bellingham: SPIE, pp. 40–45, Sept. 1985.
2. J. Austin and J. R. Forrest, “Design concepts for active phased-array modules,” Proc. Inst. Elec. Eng., pt. F, vol. 127, pp. 290–300, Aug. 1980.
3. J. C. Gammel and J. M. Ballantyne, “The OPFET: A new high speed optical detector,” in IEEE Int. Electron Devices Meeting Tech. Dig., Dec. 1978, pp. 120–123.
4. T. Sugeta and Y. Mizushima, “High speed photo response mechanism of a GaAs-MESFET,” Japan. J. Appl. Phys., vol 19, pp. L27-L29, Jan. 1980.
5. H. Mizuno, “Microwave characteristics of an optically controlled GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 596–600, July 1983.
6. A. A. A. DeSalles, “Optical control of GaAs MESFET's,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 812–820, Oct. 1983.
7. J. L. Gautier, D. Pasquet, and P. Pouvil, “Optical effects on the static and dynamic characteristics of a GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp. 819–822, Sept. 1985.
8. C. Y. Chen, A. Y. Cho, C. G. Bethea, P. A. Garbinski, Y. M. Pang, B. F. Levine, and K. Ogawa, “Ultrahigh speed modulation-doped heterostructure field-effect photodetectors,” Appl. Phys. Lett., vol. 42, pp. 1040-1042, June 1983.
9. T. Umeda, Y. Cho, and A. Shibatomi, “Picosecond HEMT photodetector,” Japan. J. Appl. Phys., vol. 25, pp. L801-L803, Oct. 1986.
10. R. N. Simons and K. B. Bhasin, “Analysis of optically controlled microwave/millimeter-wave device structures,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1349–1355, Dec. 1986.
11. R. A. Minasian, “Simplified GaAs MESFET model to 10 GHz,” Electron, Lett., vol. 13, pp. 549–551, Sept. 1977.
12. T. M. Reeder and W. B. Wylie, “CAD/CAM for GaAs IC's,” in Proc. Microwave Syst. Appl. Technol. Conf., Mar. 1983, pp. 461–474.
13. B. Kim and H. Q. Tserng, “0.5 W, 2-21 GHz monolithic GaAs distributed amplifier,” Electron. Lett., vol. 20, pp. 288–289, Mar. 1984.
14. Ortel Corporation Optoelectronic Products Catalogue.
15. P. A. Folkes, “Characteristics and mechanism of 1/f noise in GaAs Schottky barrier field effect transistors,” Appl. Phys. Lett., vol. 48, pp. 344–346, Feb. 1986.
16. A. Van der Ziel, Noise, Sources, Characterization, and Measurements. Englewood Cliffs, NJ: Prentice-Hall, 1970.
17. W. Baechtold, “Noise behavior of GaAs field-effect transistors with short gate lengths,” IEEE Trans. Electron Devices, vol. ED-19, pp. 674–680, May 1972.
18. A. Swanson, J. Herb, and M. Yung, “First commercial HEMT challenges GaAs FETs,” Microwaves and RF, vol. 24, pp. 107–118, Nov. 1985.
19. G. Keiser, Optical Fiber Communications. New York: McGraw-Hill, 1983, p. 251.
20. P. R. Prucnal, E. R. Fossum, and R. M. Osgood, “Integrated fiber-optic coupler for very large scale integration interconnects,” Opt. Lett., vol. 11, pp. 109–111, Feb. 1986.
21. J. K. Carney, M. J. Helix, and R. M. Kolbas, “Gigabit optoelectronic transmitters,” in GaAs IC Symp. Dig., 1983, pp. 48–51.
22. P. R. Herczfeld, A. S. Daryoush, V. M. Contarino, A. Rosen, Z. Turski, and A. P. S. Khanna, “Optically controlled microwave devices and circuits,” in 1985 IEEE MTT-S Int. Microwave Symp. Dig., June 4–6, 1985, pp. 211–214.
23. P. Wahi, Z. Turski, A. S. Daryoush, and P. R, Herczfeld, “Comparison of indirect optical injection locking techniques of multiple X-band Oscillators,” in 1986 IEEE MTT-S Int. Microwave Symp. Dig., June 2–4, 1986, pp. 615–618.