Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Journal of Physics Condensed Matter

Volumn 10, Issue 1, 1998, Pages 1-43

  Sobiesierski, Z ^a   Westwood, D I ^a   Matthai, C C ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISTRY; CRYSTAL STRUCTURE; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON REFLECTION; ELECTRONIC PROPERTIES; IMAGE RECONSTRUCTION; ION BEAMS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES; VACUUM APPLICATIONS;

REFLECTION ANISOTROPY SPECTROSCOPY; SURFACE SENSITIVE OPTICAL PROBE;

SPECTROSCOPY;

EID: 0031653726     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/1/005     Document Type: Article

References (78)

1. Aspnes D E, Harbison J P, Studna A A and Florez L T 1987 Phys. Rev. Lett. 59 1687
2. Aspnes D E, Harbison J P, Studna A A and Florez L T 1988 J. Vac. Sci. Technol. A 6 1327
3. McGilp J F 1993 Appl. Surf. Sci. 63 99
4. McGilp J F 1995 Prog. Surf. Sci. 49 1
5. Morris S J 1994 PhD Thesis University of Wales
6. Zettler J-T 1996 Prog. in Crystal Growth and Characterization of Materials (New York: Pergamon)
7. Sobiesierski Z and Westwood D I 1997 Thin Solid Films, Proc. European Materials Research Society Meeting (Strasbourg, 1997) at press
8. Westwood D I, Woolf D A and Williams R H 1989 J. Crystal Growth 98 782
9. Wassermeier M, Kamiya I, Aspnes D E, Florez L T, Harbison J P and Petroff P M 1991 J. Vac. Sci. Technol. B 9 2263
10. Kamiya I, Aspnes D E, Florez L T and Harbison J P 1992 Phys. Rev. B 46 15 894
11. Ploska K, Zettler J-T, Richter W, Jönsson J, Reinhardt F, Rumberg J, Pristovsek M, Zorn M, Westwood D and Williams R H 1994 J. Crystal Growth 145 44
12. Zorn M, Trepk T, Zettler J-T, Meyne C, Knorr K, Wethkamp Th, Richter W, Junno B, Miller M and Samuelson L Proc. 8th Int. Conf. on InP and Related Mater. (Schwabisch-Gmund, 1996)
13. Sung M M, Kim C, Bu H, Karpuzov D S and Rabalais J W 1995 Surf. Sci. 322 116
14. Ozanyan K B, Parbrook P J, Hopkinson M, Whitehouse C R, Sobiesierski Z and Westwood D I 1997 J. Appl. Phys. 82 474
15. Parbrook P J, Ozanyan K B, Hopkinson M, Whitehouse C R, Sobiesierski Z and Westwood D I 1997 Proc. 6th Int. Conf. on the Formation of Semiconductor Interfaces (Cardiff, 1997)
16. Rose K C, Morris S J, Westwood D I, Woolf D A, Williams R H and Richter W 1995 Appl. Phys. Lett. 66 1930 Morris S J, Zettler J-Th, Rose K C, Westwood D I, Woolf D A, Williams R H and Richter W 1995 J. Appl. Phys. 77 3115
17. Rose K C, Morris S J, Westwood D I, Woolf D A, Williams R H and Richter W 1995 Appl. Phys. Lett. 66 1930 Morris S J, Zettler J-Th, Rose K C, Westwood D I, Woolf D A, Williams R H and Richter W 1995 J. Appl. Phys. 77 3115
18. Zorn M, Jönsson J, Krost A, Richter W, Zettler J-T, Ploska K and Reinhardt F 1994 J. Crystal Growth 145 53
19. Manghi F, Del Sole R, Selloni A and Molinari E 1990 Phys. Rev. B 41 9935
20. Morris S J, Bass J M and Matthai C C 1995 Phys. Rev. B 52 16 739
21. Snkrebtii A I and Del Sole R 1993 Phys. Rev. Lett. 70 2645
22. Kipp L, Biegelsen D K, Northrup J E, Swartz L E and Bringans R D 1996 Phys. Rev. Lett. 76 2810
23. Kress C, Shkrebtii A and Del Sole R 1997 Surf. Sci. 377 398
24. Anyele H and Matthai C C 1996 J. Phys.: Condens. Matter 8 6585
25. Morris S J, Bass J M, Matthai C C, Milman V and Payne M C 1994 J. Vac. Sci. Technol. B 12 2684
26. Northrup J E and Froyen S 1994 Phys. Rev. B 50 2015
27. Bass J M and Matthai C C 1996 J. Vac. Sci. Technol. B 14 3075
28. Esser N, Shkrebtii A I, Resch-Esser U, Springer C, Richter W, Schmidt W G, Bechstedt F and Del Sole R 1996 Phys. Rev. Lett. 77 4402
29. Mochan W L and Barrera R G 1985 Phys. Rev. Lett. 55 1192
30. Fahy M R, Ashwin M J, Harris J J, Newman R C and Joyce B A 1992 Appl. Phys. Lett. 61 1805
31. Wassermeier M, Behrend J, Däweritz L and Ploog K 1995 Phys. Rev. B 52 R2269
32. Woolf D A, Rose K C, Rumberg J, Westwood D I, Reinhardt F, Morris S J, Richter W and Williams R H 1995 Phys. Rev. B 51 4691
33. Avery A R, Sudijono J, Holmes D M, Jones T S and Joyce B A 1995 Appl. Phys. Lett. 66 3200
34. Levermann A H, Woolf D A, Westwood D I and Macdonald J A 1996 Surf. Sci. 352 812
35. Woolf D A, Rose K C, Morris S J, Westwood D I, Rumberg J, Reinhardt F, Richter W and Williams R H 1995 J. Crystal Growth 150 197
36. Knorr K, Rumberg A, Zorn M, Meyne C, Trepk T, Zettler J-T, Richter W, Kurpas P and Weyers W 1996 Proc. 8th Int. Conf. on InP and Related Mater. (Schwabisch-Gmund, 1996)
37. Davies G J, Heckingbottom R, Ohno H, Wood C E C and Calawa A R 1980 Appl. Phys. Lett. 37 290
38. Moison J M, Bensoussan M and Houzay F 1996 Phys. Rev. B 34 2018
39. Hollinger G, Gallet D, Gendry M, Santinelli C and Viktorovitch P 1990 J. Vac. Sci. Technol. B 8 832
40. Sobiesierski Z, Clark S A, Williams R H, Tabala A, Benyattou T, Guillot G, Gendry M, Hollinger G and Viktorovitch P 1991 Appl. Phys. Lett. 58 1863
41. Kobayashi N and Kobayashi Y 1992 J. Crystal Growth 124 525
42. Aspnes D E, Tamargo M C, Brasil M J S P, Nahory R E and Schwarz S A 1994 J. Vac. Sci. Technol. A 12 1180
43. Kurpas P, Jönsson J, Richter W, Gutsche D, Pristovsek M and Zorn M 1994 J. Crystal Growth 145 36
44. Jönsson J, Reinhardl F, Zorn M, Ploska K, Richter W and Rumberg J 1994 Appl. Phys. Lett. 64 1998
45. Sobiesierski Z, Westwood D I, Parbrook P J, Ozanyan K B, Hopkinson M and Whitehouse C R 1997 Appl. Phys. Lett. 70 1423
46. Esser N, Santos P V, Kuball M, Cardona M, Arens M, Pahlke D, Richter W, Stietz D, Schaefer J A and Fimland B O 1995 J. Vac. Sci. Technol. B 13 1666
47. Yasuda T, Aspnes D E, Lee D R, Bjorkman C H and Lucovsky G 1994 J. Vac. Sci. Technol. A 12 1152
48. Aspnes D E 1976 Optical Properties of Solids: New Developments ed B O Seraphin (Amsterdam: North-Holland) p 799
49. Yasuda T, Mantese L, Rossow U and Aspnes D E 1995 Phys. Rev. Lett. 74 3431
50. Chadi D J 1979 Phys. Rev. Lett. 43 43
51. Chadi D J 1987 Phys. Rev. Lett. 59 1691
52. Swartzentruber B S, Kitamura N, Lagally M G and Webb M R 1993 Phys. Rev. B 47 13 432
53. Cole R J, Tanaka S, Gerber P, Power J R, Farrell T and Weightmann P 1996 Phys. Rev. B 54 13 444
54. Rossow U, Mantese L and Aspnes D E 1996 J. Vac. Sci. Technol. B 14 3070
55. Turner A R, Pemble M E, Fernandez J M, Joyce B A, Zhang J and Taylor J G 1995 Phys. Rev. Lett. 74 3213
56. Zhang J, Taylor A G, Lees A K, Fernandez J M, Joyce B A, Raisbeck D, Shukla N and Pemble M E 1996 Phys. Rev. B 53 10 107
57. Xie M H, Zhang J, Lees A K, Fernandez J M and Joyce B A 1996 Surf. Sci. 367 231
58. Liehr M, Greenlief C M, Offenberg M and Kasi S R 1990 J. Vac. Sci. Technol. A 8 2960
59. Sinniah K, Sherman M G, Lewis L B and Weinberg W H 1989 Phys. Rev. Lett. 62 567
60. Lees A K, Zhang J, Sobiesierski Z, Taylor A G, Xie M H, Joyce B A and Westwood D I 1996 Proc. 23rd Int. Conf. on the Physics of Semiconductors (Berlin, 1996) ed. M Scheffler and R Zimmermann (Singapore: World Scientific) p 955
61. Zhang J, Lees A K, Taylor A G, Xie M H, Joyce B A, Sobiesierski Z and Westwood D I 1997 Proc. MBE 9 J. Crystal Growth
62. Zhang J 1996 private communication
63. Power J R, Farrell T, Gerber P, Chandola S, Weightman P and McGilp J F 1996 Appl. Phys. Lett. 69 176
64. Sobiesierski Z, Westwood D I and Woolf D A 1996 J. Vac. Sci. Technol. B 14 3065
65. Tanaka H, Colas E, Kamiya I, Aspnes D E and Bhat R 1991 Appl. Phys. Lett. 59 3443
66. Acosta-Ortiz S E and Lastras-Martinez A 1989 Phys. Rev. B 40 1426
67. Ashwin M J, Fahy M, Harris J J, Newman R C, Sansom D A, Addinall R, McPhail D S and Sharma V K M 1993 J. Appl. Phys. 73 633
68. Aspnes D E and Studna A A 1983 Phys. Rev. B 27 985
69. Sobiesierski Z, Westwood D I and Elliott M 1997 Phys. Rev. B at press
70. Kuball M, Kelly M K, Cardona M, Kohler K and Wagner J 1994 Phys. Rev. B 49 16 569
71. Houzay F, Guille C, Moison J M, Henoc P and Barthe F 1987 J. Crystal Growth 81 67
72. Steimetz E, Zettler J-T, Richter W, Westwood D I, Woolf D A and Sobiesierski Z 1996 J. Vac. Sci. Technol. B 14 3058
73. Steimetz E, Schienle F, Zettler J-T, Richter W, Westwood D, Sobiesierski Z, Matthai C, Junno B, Miller M and Samuelson L 1996 Proc. 23rd Int. Conf. on the Physics of Semiconductors (Berlin, 1996) ed M Scheffler and R Zimmermann (Singapore: World Scientific) p 1297
74. Steimetz E, Schienle F, Zettler J-T and Richter W 1997 J. Crystal Growth 170 208
75. Yasuda T, Kuo L H, Kimura K, Miwa S, Jin C G, Tanaka K and Yao T 1996 J. Vac. Sci. Technol. B 14 3052
76. Moison J M, Houzay F, Barthe F, Leprince L, André E and Vatel O 1994 Appl. Phys. Lett. 64 196
77. Westwood D I unpublished
78. Koopmans B, Richards B, Santos P, Eberl K and Cardona M 1996 Appl. Phys. Lett. 69 782