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Volumn 423, Issue , 1996, Pages 385-390
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High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY OF SOLIDS;
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
NITRIDES;
PHOTOLUMINESCENCE;
PLASMA SOURCES;
SAPPHIRE;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
X RAY DIFFRACTION ANALYSIS;
GALLIUM NITRIDE;
MOTT ANDERSON TRANSITION;
PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
SEMICONDUCTING FILMS;
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EID: 0030398934
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-423-385 Document Type: Conference Paper |
Times cited : (3)
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References (15)
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