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Volumn 423, Issue , 1996, Pages 385-390

High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PLASMA SOURCES; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EID: 0030398934     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-385     Document Type: Conference Paper
Times cited : (3)

References (15)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.