Interfacial reactions between metal thin films and p-GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 819-824

  Trexler, J T ^a   Miller, S J ^a   Holloway, P H ^a   Khan, M A ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; LIGHT EMITTING DIODES; METALLIC FILMS; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; VOLTAGE MEASUREMENT;

INTERFACIAL C LAYER; INTERFACIAL REACTIONS; METALLIZATION; WAVELENGTH REGION;

INTERFACES (MATERIALS);

EID: 0029770735     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)