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Physica Status Solidi (B) Basic Research

Volumn 202, Issue 2, 1997, Pages 657-668

Heterovalent ZnSe/GaAs interfaces

(11) Yao, T a,b Lu, F a Cho, M W a Koh, K W a Zhu, Z a Kuo, L H b,d Yasuda, T b,e Ohtake, A b,d Miwa, S b,d Kimura, K b,c,d Nakajima, K c

a TOHOKU UNIVERSITY (Japan)

b JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

c KYOTO UNIVERSITY (Japan)

d Angstrom Technology Partnership (Japan)

e NATL INST FOR ADV INTERDISC RES (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031493552 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(199708)202:2<657::AID-PSSB657>3.0.CO;2-4 Document Type: Article

Times cited : (2)

References (17)

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