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Volumn 36, Issue 1 PART A/B, 1997, Pages

(110) Substrates for ZnSe on GaAs heteroepitaxy

Author keywords

Interface disorder; RBS channeling; ZnSe on GaAs heteroepitaxy

Indexed keywords

BACKSCATTERING; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

CHANNELING BACKSCATTERING; HETEROEPITAXY; INTERFACE DISORDER;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030705807 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l12 Document Type: Article

Times cited : (10)

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