The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs

Nuclear Inst. and Methods in Physics Research, B

Volumn 90, Issue 1-4, 1994, Pages 349-353

  Goodman, S A ^a   Auret, F D ^a   Meyer, W E ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000280653     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(94)95569-7     Document Type: Article

References (20)

1. Measurements of Alpha-Particle-Induced Charge in GaAs Devices
2. Effects of a buried p-layer on alpha-particle immunity of MESFET's fabricated on semi-insulating GaAs substrates
3. Modifications to the Boonton 72BD capacitance meter for deep-level transient spectroscopy applications
4. A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts