Electromigration in integrated circuits

Critical Reviews in Solid State and Materials Sciences

Volumn 22, Issue 3, 1997, Pages 199-238

  Malone, D W ^a,b   Hummel, R E ^a  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

Electromigration; Integrated circuit; Microelectronics; Reliability; Thin films

Indexed keywords

INTEGRATED CIRCUITS; MICROELECTRONICS; WEAR OF MATERIALS;

PULSED CURRENT ELECTROMIGRATION;

ELECTROMIGRATION;

EID: 0031368930     PISSN: 10408436     EISSN: None     Source Type: Journal    
DOI: 10.1080/10408439708241261     Document Type: Article

References (46)

1. Verhoeven, J., Metallurgical Reviews, 8(31), 311 (1963).
2. Huntington, H. B. in Diffusion in Solids: Recent Developments, edited by A. S. Nowick, and J. J. Burton, Academic Press, New York, NY, 1975, pp. 303-352.
3. Sorbello, R. S. in Electro-and Thermo-transport in Metals and Alloys, edited by R. E. Hummel and H. B. Huntington, AIME, New York, NY, 1977, pp. 2-19.
4. d'Heurle, F. M. and Ho, P. S. in Thin Films: Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer, Wiley-Interscience, New York, 1978, pp. 243-303.
5. Kwok, T. and Ho, P. S. in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by D. Gupta and P. S. Ho, Noyes, Park Ridge, NJ, 1988, pp. 369-431.
6. Christou A. (editor), Electromigration and Electronic Device Degradation Wiley-Interscience, New York, 1994.
7. Hummel, R. E., International Materials Reviews, 39(3), 97 (1994).
8. Huntington, H. B. and Grone, A. R., J. Phys. Chem. Solids, 20, 76 (1961).
9. Black, J. R., Proc. IEEE, 57(9), 1587 (1969).
10. Black, J. R., IEEE Trans. Electron Dev., ED-16(4), 338 (1969).
11. d'Heurle, F. M., Metallurgical Transactions, 2, 683 (1971).
12. Agarwala, B. N. in Proc. 13th Int. Reliability Physics Symp., IEEE, 1975, p. 107.
13. Schafft, H. A., Grant, T. C., Saxena, A. N., and Kao, C. in Proc. 23rd Int. Reliability Physics Symp., IEEE, 1985, p. 93.
14. Venables, J. D. and Lye, R. G. in Proc. 10th Int. Reliability Physics Symp., IEEE, 1972, p. 159.
15. Sigsbee, R. A. in Proc. 11th Int. Reliability Physics Symp., IEEE, 1973, p. 301.
16. Shatzkes, M. and Lloyd, J. R., J. Appl. Phys., 59(11), 3890 (1986).
17. Lloyd, J. R. and Koch, R. H., Appl. Phys. Lett., 52(3), 194 (1988).
18. Harrison, J. W., IEEE Trans. Electron Dev., 35(12), 2170 (1988).
19. Suehle, J. S. and Schafft, H. A. in Proc. 27th Int. Reliability Physics Symp., IEEE, 1989, p. 229.
20. Liew, B. K., Cheung, N. W., and Hu, C. in Proc. 27th Int. Reliability Physics Symp., IEEE, 1989, p. 215.
21. Maiz, J. A. in Proc. 27th Int. Reliability Physics Symp., IEEE, 1989, p. 220.
22. Hatanaka, K., Noguchi, T., and Maeguchi, K. in Symposium on VLSI Technology: Digest of Technical Papers, IEEE and JSAP, 1989, p. 19.
23. Hummel, R. E. and Hoang, H. H., J. Appl. Physics, 65(5), 1929 (1989).
24. Liew, B. K., Cheung, N. W., and Hu, C., IEEE Trans. Electron Dev., 37(5), 1343 (1990).
25. Suehle, J. S. and Schafft, H. A. in Proc. 28th Int. Reliability Physics Symp., IEEE, 1990, p. 106.
26. Liew, B. K., Fang, P., Cheung, N. W., and Hu, C. in Proc. 28th Int. Reliability Physics Symp., IEEE, 1990, p. 111.
27. Tao, J., Young, K. K., Pico, C. A., Cheung, N. W., and Hu, C., IEEE Electron Dev. Lett., 12(12), 646 (1991).
28. Kwok, T., Kaufman, R., and Davari, B. in Materials Reliability Issues in Microelectronics, edited by J. R. Lloyd, F. G. Yost, and P. S. Ho, Mater. Res. Soc. Proc. 225, Pittsburgh, PA, 1991, pp. 85-89.
29. Clement, J. J., J. Appl. Phys., 71(9), 4264 (1992).
30. Clement, J. J. in Materials Reliability in Microelectronics II, edited by C. V. Thompson and J. R. Lloyd, Mater. Res. Soc. Proc. 265, Pittsburgh, PA, 1992, pp. 57-63.
31. Tao, J., Young, K., Cheung, N., and Hu, C. in Proc. 30th Int. Reliability Physics Symp., IEEE, 1992, p. 338.
32. Li, Z., Bauer, C. L., Mahajan, S, and Milnes, A. G., J. Appl. Phys., 72(5), 1821 (1992).
33. Hinode, K., Furusawa, T., and Homma, Y. in Proc. 30th Int. Reliability Physics Symp., IEEE, 1992, p. 205.
34. Castano, E. and Maiz, J., Micro electron, and Reliab., 33(8), 1189 (1993).
35. Baldini, G. L., Scorzoni, A., and Tamarri, F., Microelectron, and Reliab., 33(11/12), 1841 (1993).
36. Ting, L. M., May, J. S., Hunter, W. R., and McPherson, J. W. in Proc. 31st Int. Reliability Physics Symp., IEEE, 1993, p. 311.
37. Tao, J., Cheung, N., and Hu, C., IEEE Trans. Electron Dev., 41(4), 539 (1994).
38. Pierce, D. G., Snyder, E. S., Swanson, S. E., and Irwin, L. W. in Proc. 32nd Int. Reliability Physics Symp., IEEE, 1994, p. 198.
39. Ohfuji, S. and Tsukada, M., J. Appl. Phys., 78(6), 3769 (1995).
40. Frankovic, R., Bernstein, G. H., and Clement, J. J. in Materials Reliability in Microelectronics VI, edited by W. F. Filter, J. J. Clement, A. S. Oates, R. Rosenberg, and P. M. Lenahan, Mater. Res. Soc. Proc. 428, Pittsburgh, PA, 1996, p. 109.
41. Frankovic, R., Bernstein, G. H., and Clement, J. J., IEEE Electron Dev. Lett., 17(5), 244 (1996).
42. Verbruggen, A. H., van den Homberg, M. J. C., Kalkman, A. J., Kraayeveld, J. R., Willemsen, A. W.-J., and Radelaar, S. in Materials Reliability in Microelectronics VI, edited by W. F. Filter, J. J. Clement, A. S. Oates, R. Rosenberg, and P. M. Lenahan, Mater. Res. Soc. Proc. 428, Pittsburgh, PA, 1996, p. 121.
43. Tao J., Chen, J. F., Cheung, N. W., and Hu, C., IEEE Trans. Electron Dev., 43(5), 800 (1996).
44. Tao J., Chen, J. F., Cheung, N. W., and Hu, C. in Proc. 34th Int. Reliability Physics Symp., IEEE, 1996, p. 180.
45. Dwyer, V. M., IEEE Trans. Electron Dev., 43(6), 877 (1996).
46. Malone, D. W., Ph.D. Dissertation, University of Florida, Gainesville, FL, 1997.