Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2309-2311

  Ling, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DIODES;

CHARGE PUMPING CURRENTS; GATED DIODE CURRENT;

MOSFET DEVICES;

EID: 0031336441     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644662     Document Type: Article

References (10)

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9. C. H. Ling Electron trapping and interface trap generation in PMOSFET's Jpn. J. Appl. Phys. vol. 32 pp. L1371-L1373 1993.
10. R. Bellens E. De Schrijver G. van den Bosch G. Groeseneken P. Heremans and H. E. Maes On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors IEEE Trans. Electron Devices vol. 42 pp. 413-419 1994.