Hot-Carrier Degradation of n-Channel MOSFET’s Characterized by a Gated-Diode Measurement Technique

IEEE Electron Device Letters

Volumn 10, Issue 2, 1989, Pages 76-78

  Giebel, T ^a   Goser, Karl ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES;

GATED-DIODE MEASUREMENT TECHNIQUE; HOT CARRIER DEGRADATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024612061     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.32434     Document Type: Article

References (2)

1. K. R. Hofmann, C. Werner, W. Werner, and G. Dorda, “Hot-electron and hole-emission effects in short n-channel MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, no. 3, pp. 691-698, 1985.
2. A. S. Grove and D. J. Fitzgerald, “Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions,” Solid-State Electron., vol. 9, pp. 783-805, 1966.