Characterization of Hot-Electron-Stressed MOSFET’s by Low-Temperature Measurements of the Drain Tunnel Current

IEEE Transactions on Electron Devices

Volumn 37, Issue 6, 1990, Pages 1467-1476

  Acovic, Alexandre ^a   Dutoit, Michel ^a   Ilegems, Marc ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--CURRENT; ELECTRONS;

DRAIN-SUBSTRATE DIODE; FORWARD BIAS; HOT-ELECTRON-STRESSED MOSFET; NMOSFET; PMOSFET; REVERSE BIAS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025448159     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106242     Document Type: Article

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