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Volumn E78-C, Issue 9, 1995, Pages 1189-1194
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0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFIERS (ELECTRONIC);
FREQUENCY DIVIDING CIRCUITS;
GATES (TRANSISTOR);
LEAKAGE CURRENTS;
PERFORMANCE;
REFRACTORY METALS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SUBSTRATES;
TECHNOLOGY;
DYNAMIC FREQUENCY DIVIDER;
LIGHTLY DOPED DRAIN STRUCTURE;
MESFET DEVICES;
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EID: 0029369370
PISSN: 09168524
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (4)
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References (14)
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