Phosphorus coimplantation effects on optimum annealing temperature in Si-implanted GaAs

Journal of Applied Physics

Volumn 67, Issue 1, 1990, Pages 552-554

  Sugitani, Suehiro ^a   Hyuga, Fumiaki ^a   Yamasaki, Kimiyoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004329496     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.345245     Document Type: Article

References (5)