Fabrication and Numerical Simulation of the Permeable Base Transistor

IEEE Transactions on Electron Devices

Volumn 27, Issue 6, 1980, Pages 1128-1141

  Bozler, Carl O ^a   Alley, Gary D ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PERMEABLE BASE TRANSISTOR;

TRANSISTORS, FIELD EFFECT;

EID: 0019022397     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.19996     Document Type: Article

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