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General formulation of the current-voltage characteristic of a p-n heterojunction solar cell
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On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors
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An investigation of the effect of graded layers and tunneling on the performance of AIGaAs/GaAs heterojunction bipolar transistors
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12
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A scattering matrix approach to device analysis
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Das, A.1
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13
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0027544614
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Formulation of the Boltzmann equation in terms of scattering matrices
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M. A. Alam, M. A. Stettler, and M. S. Lundstrom, “Formulation of the Boltzmann equation in terms of scattering matrices,” Solid-State Electron, vol. 36, no. 2, pp. 263-271, 1993.
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Alam, M.A.1
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14
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Self-consistent scattering matrix calculation of the distribution function in semiconductor devices
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June
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M. A. Stettler and M. S. Lundstrom, “Self-consistent scattering matrix calculation of the distribution function in semiconductor devices,” Appl. Phys. Lett., vol. 60, pp. 2908-2910, June 1992.
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Stettler, M.A.1
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16
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The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
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Jacoboni, C.1
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Modeling semiconductor heterojunctions in equilibrium
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Lundstrom, M.S.1
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18
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0022144794
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The Bethe condition for thermionic emission near an absorbing boundary
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New physical formulation of the thermionic emission current at the heterojunction interface
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July
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Electron quasi-Fermi level splitting at the base-emitter junction of AIGaAs/GaAs HBT’s
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June
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Diffusion near an absorbing boundary
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A critical examination of the assumptions underlying macroscopic transport equations for silicon devices
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Apr.
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M. A. Stettler, M. A. Alam, and M. S. Lundstrom, “A critical examination of the assumptions underlying macroscopic transport equations for silicon devices,” IEEE Trans. Electron Devices, vol. 40, pp. 733-740, Apr. 1993
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Stettler, M.A.1
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