Investigation of Transient Electronic Transport in GaAs Following High Energy Injection

IEEE Transactions on Electron Devices

Volumn 29, Issue 12, 1982, Pages 1906-1911

  Tang, Jeffrey Yuh Fong ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - TRANSPORT PROPERTIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0020292188     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.21050     Document Type: Article

References (12)

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3. M. S. Shur, “Ballistic transport in a semiconductor with collisions,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1120–1130, 1981.
4. M. S. Shur and L. F. Eastman, “Near ballistic electron transport in GaAs devices at 77 K,” Solid-State Electron., vol. 24, pp. 11–18, 1981.
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8. H. Shichijo and K. Hess, “Band-structure dependent transport and impact ionization in GaAs,” Phys. Rev. B, vol. 23, pp. 4197–4207, 1981.
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10. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, “Velocity-field characteristics of GaAs with [formula omitted] conduction band ordering,” J. Appl. Phys., vol. 48, pp. 4587–4590, 1977.
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