Improvement of the Drain Breakdown Voltage of GaAs Power Mesfet's by a Simple Recess Structure

IEEE Transactions on Electron Devices

Volumn 25, Issue 6, 1978, Pages 563-567

  Furutsuka, Takashi ^a   Tsuji, Tsutomu ^a   Hasegawa, Fumio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES;

MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0017982603     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19137     Document Type: Article

References (11)

1. R. Yamamoto, A. Higashisaka, and F. Hasegawa, “Light emission and burnout characteristics of GaAs power MESFET’s,” this issue, pp. 567–573.
2. M. Fukuta, K. Suyama, H. Suzuki, Y. Nakayama, and H. Ishikawa, “Power GaAs MESFET with a high drain-source breakdown voltage,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 312–317, June 1976.
3. W. C. Niehaus, H. M. Cox, B. S. Hewitt, S. H. Wemple, J. V. DiLorenzo, W.O. Schlosser, and F. M. Magalhaes, “GaAs power MESFETs,” in Proc. 1976 Int. Symp. North Amer. Conf. on Gallium Arsenide and Related Compounds, 271–280.
4. T. Nozaki, M. Ogawa, H. Terao, and H. Watananbe, “Multi-layer epitaxial technology for the Schottky barrier GaAs field-effect transistor,” in Proc. 1974 Int. Symp. Gallium Arsenide and Related Compounds, pp. 46–54.
5. K. Ohata, T. Nozaki, and N. Kawamura, “Improved noise performance of GaAs MESFET's with selectively ion-implanted n + source regions,” IEEE Trans. Electron Devices, vol. ED-24, pp. 1129–1130, Aug. 1977.
6. S. H. Wemple and W. C. Niehaus, “Source-drain burn-out in GaAs MESFETs,” in Proc. 1976 Int. Symp. North Amer. Conf. on Gallium Arsenide and Related Compounds, pp. 262–270.
7. T. Mimura, H. Suzuki, and M. Fukuta, “Visible light emission from GaAs field-effect transistor,” Proc. IEEE (Lett.), vol. 65, pp. 1407–1408, Sept. 1977.
8. Y. Takayama, K. Honjo, A. Higashisaka, and F. Hasegawa, “Internally matched microwave broadband linear power FET,” in ISSCC Dig. Tech. Papers, pp. 166–167, 1977.
9. K. Yamaguchi, S. Asai, and H. Kodera, “Two-dimensional analysis of stability criteria of GaAs FET’s,” IEEE Trans. Electron Devices, vol. ED-23, pp. 1283–1290, Dec. 1976.
10. K. Lehovec and R. S. Miller, “Field distribution in junction field-effect transistors at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-22, pp. 273–281, May 1975.
11. F. Hasegawa, Y. Takayama, A. Higashisaka, T. Furutsuka, and K. Honjo, “GaAs power MESFET's with a simple recess structure,” inZSSCCDig. Tech. Papers, pp. 118–119, 1978.