Overestimation of oxide defects density in large test capacitors due to plasma processing

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1554-1556

  Shin, Hyungcheol ^a   Je, Minkyu ^a   Hu, Chenming ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); OXIDES; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES;

OXIDE DEFECT DENSITY;

CAPACITORS;

EID: 0031236729     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622615     Document Type: Article

References (12)

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