Modeling oxide thickness dependence of charging damage by plasma processing

IEEE Electron Device Letters

Volumn 14, Issue 11, 1993, Pages 509-511

  Shin, Hyungcheol ^a   Noguchi, Ko ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; PLASMA APPLICATIONS; STRESSES; THICKNESS MEASUREMENT; VOLTAGE MEASUREMENT;

BREAKDOWN VOLTAGE; CAPACITANCE-VOLTAGE CURVES; CHARGING CURRENT; DEFECT INDUCED BREAKDOWN MODEL; OXIDE PLASMA CHARGING DAMAGE; OXIDE THICKNESS; PLASMA PROCESSING; POLYSILICON GATE;

MOS DEVICES;

EID: 0027693956     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.257998     Document Type: Article

References (13)

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