Gate oxide charging and its elimination for metal antenna capacitor and transistor in VLSI CMOS double layer metal technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1989, Pages 73-74

  Shone, F ^a   Wu, K ^a   Shaw, J ^a   Hokelek, E ^a   Mittal, S ^a   Haranahalli, A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CAPACITORS; DIELECTRIC MATERIALS; SEMICONDUCTOR DEVICES, MOS; TRANSISTORS, FIELD EFFECT;

DOUBLE-LAYER METAL TECHNOLOGY; HOT ELECTRON STRESS; METAL-ANTENNA CAPACITORS; OXYNITRIDE DEPOSITION; VLSI CMOS; WAFERS;

INTEGRATED CIRCUITS, VLSI;

EID: 0024907452     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)