Reduced device damage using an ozone based photoresist removal process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1086, Issue , 1989, Pages 598-604

  Mitchener, James C ^b  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b Fusion Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84957462939     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.953071     Document Type: Conference Paper

References (7)

1. K.H. Sibbett, J.I. Ulacia, J. P. McVittie, and R. Reichelderfer, “Gate Oxide Damage in Dry Photoresist Stripping Environments”, MRS Symposium Proceedings, 98, 307-312, 1987.
2. T. Watanabe and Y. Yoshida, “Damage Problems in Dry Etching Process”, Toshiba Corporation, 1987.
3. S. Holland and C. Hu, “Correlation Between Breakdown and Process-Induced Positive Charge Trapping in Thin Thermal SiO2”, J. Electrochem. Soc., Vol. 133 No. 8, 1986, 1705-1712.
4. A. Beguin and G. Grassionot, “Plasma Stripping as a Source of Degradation of I.C. Devices”, ECS Proc., Plasma Processing, Denver, CO., Vol. 82, No. 6, 1982, 240-249.
5. I.C. Chen, S. Holland and C. Hu, “Electron Trap Generation by Recombination of Electrons and Holes in Si02”, Presentation at Department of Electrical Engineering and Computer Sciences, University of California, Berkeley.
6. H. Akiya, K. Saito, and K. Kobayashi, “Sodium Contamination in Si02 Films Induced by Plasma Ashing”, Japanese Journal of Applied Physics, Vol. 20 No. 3, March 1981, 647-655.
7. W. Chung, “Characterization of a Downstream Plasma Resist Strip”, Branson/IPC Technical Report, 1988.