A Model and Experiments for Thin Oxide Damage from Wafer Charging in Magnetron Plasmas

IEEE Electron Device Letters

Volumn 13, Issue 6, 1992, Pages 347-349

  Fang, Sychyi ^a   McVittie, James P ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PLASMA DEVICES;

MAGNETRON PLASMAS; SOFTWARE PACKAGE SPICE; WAFER CHARGING;

INTEGRATED CIRCUITS;

EID: 0026882443     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145080     Document Type: Article

References (12)

1. I.-W. Wu et al., “Breakdown yield and lifetime of thin gate oxides in CMOS processing,” J. Electrochem. Soc., vol. 136, p. 1638, 1989.
2. W. M. Green, J. B. Kruger, and G. Kooi, “Magnetron etching of polysilicon: Electrical damage,” J. Vac. Sci. Technol. B9, p. 366, 1991.
3. T. Namura and H. Uchida, “Charge build-up mechanism in barrel reactor,” in Proc. 11th Symp. Dry Process, 1989, p. 74.
4. M. Kubota et al., “Simulational study for gate oxide breakdown mechanism due to nonuniform electron current flow,” in IEDM Tech. Dig., 1991, p. 891.
5. S. Samukawa, “The charge build-up in an ECR plasma etching,” in Extended Abstr. 38th Meeting, Japan Soc. Appl. Phys., 1991, 2–499.
6. B. Chapman, Glow Discharge Processes. New York: Wiley, 1980, pp. 51–69.
7. S. Fang and J. P. McVittie, “Thin-oxide damage from gate charging during plasma processing,” IEEE Electron Device Lett., vol. 13, pp. 288–290, May 1992.
8. F. Chen, Introduction to Plasma Physics. New York: Plenum, 1984, pp. 169–172.
9. S. Fang, A. M. McCarthy, and J. P. McVittie, “Charge sharing antenna effects for gate oxide damage during plasma processing,” in Proc. 3rd Int. Symp. ULSI (Washington, DC), May 1991, p. 473.
10. A. P. Paranjpe, J. P. McVittie, and S. A. Self, “A tuned langmuir probe for measurements in RF glow discharges,” J. Appl. Phys., vol. 67, p. 6718, 1990.
11. J. G. Cook, S. R. Das, and T. A. Quance, “Langmuir diagnostics of an RF-magnetron discharge used for ion-assisted growth of PbTe epilayers,” J. Appl. Phys., vol. 68, p. 1636, 1990.
12. S. M. Rossnagel and H. R. Kaufman, “Langmuir probe characterization of magnetron operation,” J. Vac. Sci. Technol. A4, p. 1822, 1986.