Single-electron transistors (SETs) with Nb/Nb oxide system fabricated by atomic force microscope (AFM) nano-oxidation process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

  Shirakashi, Jun Ichi ^a   Matsumoto, Kazuhiko ^a   Miura, Naruhisa ^b   Konagai, Makoto ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Anodization; Atomic force microscope (AFM); Coulomb blockade oscillation; Nb oxide; Niobium (Nb); Single electron charging effects; Single electron transistors (SETs); Surface modification

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; METALLIC FILMS; NIOBIUM; NIOBIUM COMPOUNDS; SURFACE TREATMENT; TUNNEL JUNCTIONS;

COULOMB BLOCKADE OSCILLATION; NIOBIUM OXIDE; SINGLE ELECTRON CHARGING EFFECTS; SINGLE ELECTRON TRANSISTORS (SET);

GATES (TRANSISTOR);

EID: 0031222627     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1257     Document Type: Article

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