A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 61-64

  Davari, B ^a   Koburger, C W ^a   Schulz, R ^a   Warnock, J D ^a   Furukawa, T ^a   Jost, M ^a   Taur, Y ^a   Schwittek, W G ^a   DeBrosse, J K ^a   Kerbaugh, M L ^a   Mauer, J L ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS;

CHEMICAL MECHANICAL POLISH; DRAM; PLANARIZATION; REACTIVE ION ETCHING (RIE); SHALLOW TRENCH ISOLATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0024895494     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)