The influence of impurity scattering in highly doped SOI-MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 79-82

  Reichert, G ^a   Ouisse, T ^a   Pelloie, J L ^b   Cristoloveanu, S ^a  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY SCATTERING; SOI-MOSFETS;

EID: 84920741507     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. D.S. Jeon and D.E. Burk, IEEE Trans. EL Dev., Vol. 36, pp. 1456-1463,1989.
2. S. Takagi, M. Iwase and A. Toriumi, Proc. IEDM, pp. 398-401,1988.
3. P.K. McLarty et al., Solid-State Electronics, Vol. 38, pp. 1175-1177, 1995.
4. G. Reichert and T. Ouisse, "Relationship between emp. and theor. mobility models in silicon inversion layers", accepted for public. IEEE T-ED, Sept. 1996.
5. G. Reichert, et al., "Mobility modeling of SOI-MOSFETs in the high temperature range", Solid-State Electronics, accepted for publication.