Near-field optical spectroscopy of single GaAs quantum wires

Surface and Interface Analysis

Volumn 25, Issue 7-8, 1997, Pages 583-592

  Richter, A ^a   Suptitz M ^a   Lienau, Ch ^a   Elsaesser, T ^a   Ramsteiner, M ^b   Notzel R ^b   Ploog, K H ^b  

^a MAX BORN INSTITUT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Near field microscopy; Photoluminescence spectroscopy; Quantum wires; Semiconductors

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; DIFFUSION IN SOLIDS; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

NEAR FIELD SCANNING OPTICAL MICROSCOPY (NSOM);

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031152269     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(199706)25:7/8<583::aid-sia276>3.0.co;2-u     Document Type: Article

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